▎ 摘　　要

NOVELTY - The method involves forming a first metal interconnection layer i.e. reflective layer, on a top metal of a complementary metal-oxide semiconductor (CMOS) measuring circuit system by using redistribution layer (RDL) process, or taking a top layer metal of the system as a first metal interconnection layer (S1). A first dielectric layer i.e. closed release isolation layer, is deposited (S2). A second metal interconnection layer is deposited (S3) on the first dielectric layer. The second metal interconnection layer is deposited (S4) to form a sacrificial layer. A third metal interconnection layer is deposited (S5) above an interconnection column. The third metal interconnection layer is etched to form a patterned electrode structure to form a beam structure and a portion of an absorption plate. A second dielectric layer i.e. thermally sensitive dielectric layer, is deposited (S6). The second dielectric layer is etched to form a patterned dielectric layer to form an absorbing plate. USE - Method for manufacturing a micro-bridge structure infrared detector. Uses include but are not limited to background monitoring market, vehicle auxiliary market, household market, intelligent manufacturing market and mobile phone application field. ADVANTAGE - The method enables realizing integrated preparation of the CMOS measuring circuit system and a CMOS infrared sensing structure on a CMOS production line by CMOS process, so that a CMOS does-not include process compatibility problem, thus solving technical difficulty of micro-electromechanical system (MEMS) process, and reducing transportation cost and risk caused by transportation. The method allows the micro-bridge structure infrared detector prepared by integrated CMOS process to realize target of high yield of a chip, low cost, high yield and large scale integrated production, thus providing wider application market for the detector, and maintaining the detector to realize smaller size and thinner film thickness of a characteristic structure, and hence providing larger duty ratio, lower thermal conductivity, less heat capacity, and better performance of the detector. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a micro-bridge structure infrared detector. (Drawing includes non-English language text). Step for forming a first metal interconnection layer on top metal of CMOS measuring circuit system by using RDL process, or taking top layer metal of system as first metal interconnection layer (S1) Step for deposting first dielectric layer (S2) Step for depositing second metal interconnection layer on first dielectric layer (S3) Step for depositing third metal interconnection layer above interconnection column (S4) Step for depositing third metal interconnection layer above interconnection column (S5) Step for depositing second dielectric layer (S6)