▎ 摘　　要

NOVELTY - Use of an amine precursor or its ammonium salt is claimed for depositing a graphene film having a nitrogen content of 0-65 wt.% on a substrate S1 by chemical vapor deposition (CVD). USE - The amine precursor or its ammonium salt is useful for depositing graphene film having nitrogen content of 0-65 wt.% on substrate S1 by CVD (claimed). ADVANTAGE - By using amine precursor or its ammonium salt, cost-efficient and simple process is provided for depositing graphene materials which may optionally be N-doped; for depositing optionally N-doped graphene; for directly depositing doped graphene without any additional doping step; and for preparing a graphene having a better sheet resistance. It enables a more facile graphene formation by gas phase activation; and enables direct graphene formation without the use of additional hydrogen. DETAILED DESCRIPTION - Use of an amine precursor of formula (I) or its ammonium salt is claimed for depositing a graphene film having a nitrogen content of 0-65 wt.% on a substrate S1 by chemical vapor deposition (CVD). R1=selected from: (a) 1-10C alkanediyl, which may all optionally be interrupted by one of O, NH and NR2; (b) alkenediyl, which may all optionally be interrupted by one of O, NH and NR2; (c) alkynediyl, which may all optionally be interrupted by one of O, NH and NR2; (d) 6-20C aromatic divalent moiety, and (e) CO, or CH2CO; X1=selected from H, OH, OR2, NH2, NHR2, or (NR2)2, where two groups X1 may together form a bivalent group X2 being selected from a chemical bond, O, NH, or NR2; R2=selected from 1-10C alkyl and 6-20C aromatic moiety which may optionally be substituted by substituents X1; and n=1-3. INDEPENDENT CLAIMS are included for: (1) a process for depositing a graphene film having a nitrogen content of 0-65 wt.% on a substrate S1, which involves: (a) providing the amine precursor of formula (I) or its ammonium salt for depositing a graphene film having a nitrogen content of 0-65 wt.% on a substrate S1 by CVD; (b) providing the substrate S1; (c) if the amine precursor is in the solid or liquid state, at least partly transferring the amine precursor into the gas phase; (d) activating the amine precursor in order to decompose the amine precursor; and (e) depositing the graphene film on the substrate S1; and (2) a layered assembly comprising a graphene film on a substrate S1 or S2, where the layered assembly is obtainable by the process above, and the graphene film has a nitrogen content of 0-65 wt.%.