▎ 摘　　要

NOVELTY - Selection of qualified region of chemical vapor deposited graphene film involves providing chemical vapor deposited graphene film formed on metal substrate, placing resultant substrate in reaction chamber, heating substrate to predetermined temperature in protective gas atmosphere, introducing reaction gas, reacting the graphene film with reaction gas, detecting defect region and removing defect by etching. USE - Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics. ADVANTAGE - The method enables removal of defect from chemical vapor deposited graphene film by simple process, with high yield.