• 专利标题:   Growing patterned graphene comprises forming nickel layer on the surface of substrate for providing growth substrate of graphene, covering surface patterning template on the surface of nickel layer and generating graphene pattern.
  • 专利号:   CN107311159-A
  • 发明人:   ZHANG D, JIN Z, SHI J, PENG S, HUANG X, YAO Y
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   C01B032/186, C01B032/188
  • 专利详细信息:   CN107311159-A 03 Nov 2017 C01B-032/188 201778 Pages: 7 Chinese
  • 申请详细信息:   CN107311159-A CN10364847 22 May 2017
  • 优先权号:   CN10364847

▎ 摘  要

NOVELTY - Growing patterned graphene comprises forming nickel layer on the surface of substrate for providing growth substrate of graphene, covering surface patterning template on the surface of nickel layer and generating graphene pattern corresponding to the surface patterned template on the surface of nickel layer. USE - Method of growing patterned graphene (claimed). ADVANTAGE - The method has simple process, high productivity, reuses graphical template and prevents pollution of graphene surface.