▎ 摘　　要

NOVELTY - Direct-current (DC) plasma system (100C) includes a DC plasma reaction chamber (110) configured to contain a DC plasma that is generated between an anode (A) and a cathode (C) of the DC plasma reaction chamber. A substrate support stage arranged in a region of the DC plasma reaction chamber that contains a positive column of the DC plasma. A reference plate made of a conductive material arranged in the region of the DC plasma reaction chamber that contains the positive column of the DC plasma so that a first surface potential that develops at a surface of the reference plate is equal to a second surface potential that develops at a surface of the substrate support stage. The first and second surface potentials being based on a potential of the DC plasma in the positive column, and control electronics configured to measure the first surface potential and correspondingly adjust a potential of the anode to adjust the second surface potential to a reference potential. USE - Direct-current (DC) plasma system for processing of a substrate. ADVANTAGE - The direct-current plasma system allow precise control of the kinetic energy of the free electrons to exactly and selectively target the energy level of an atom at the surface of the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a simplified schematic view of a DC plasma processing system. 100CDirect-current plasma system 110Direct current plasma reaction chamber AAnode CCathode D1Dark region