▎ 摘　　要

NOVELTY - The system (10) has a semiconductor substrate (20) with two electrodes (30) where a dielectric layer (40) is arranged. A graphene layer (50) is arraged over the dielectric layer and is electrically isolated from the electrodes. A differential amplifier is operatively connected to the electrodes and is electrically isolated from the graphene layer. The differential amplifier is a complementary metal oxide semiconductor (CMOS) differential amplifier. The dielectric layer is made of polydimethylsiloxane. The radiation-sensitive layer is made of hexagonal boron nitride. USE - Capacitive-based graphene sensor system. ADVANTAGE - The dielectric layer thickness is varied to modify the capacitance of the device to provide better tunability and detection over a broader energy spectrum. The multiple layers of graphene allows for a more precise determination of the energy levels of the incident radiation. The distances are optimized to exceed the distance travelled by the charge carriers without scattering for optimum energy detection. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic side view of a system with the capacitive-Based graphene sensor. Capacitive-based graphene sensor system (10) Semiconductor substrate (20) Electrode (30) Dielectric layer (40) Graphene layer (50)