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  • 专利标题:   Capacitor for semiconductor device, has dielectric sheet arranged over first graphene structure, and second graphene structure provided on dielectric sheet and comprising multiple graphene layers.
  • 专利号:   DE102015105457-A1, US2016056228-A1, KR2016022743-A, CN105679839-A, TW201618312-A, KR2016102143-A, KR1738309-B1, TW583006-B1, US10050104-B2, US2018350898-A1
  • 发明人:   JOU C, KO C, CHIU P, CHENG C, LU C, CHEN H, HSUEH F, HUANG C, JOU C P, KO C H, CHIU P W, CHENG C C, LU C C, HUANG C F, CHEN H N, HSUEH F L, HUANG Q, KE Z, QIU B, XUE F, ZHOU C, ZHENG Z, LV Z, WANN C H
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD, TAIWAN SEMICONDUCTOR MFG CO LTD
  • 国际专利分类:   H01G004/30, H01L021/768, H01L027/08, H01L023/522, H01L049/02, C01B031/04, H01L021/8242, H01L027/108, H01L021/02, H01L029/92, H01L021/50, H01L023/485, H01L021/8239, H01L023/528, H01L023/532, H01G004/005, H01G004/008
  • 专利详细信息:   DE102015105457-A1 25 Feb 2016 H01L-027/08 201616 Pages: 13 German
  • 申请详细信息:   DE102015105457-A1 DE10105457 10 Apr 2015
  • 优先权号:   US464497, US100532

▎ 摘　　要

NOVELTY - The capacitor has a first graphene structure comprising first graphene layers. A dielectric sheet is arranged over the first graphene structure. A second graphene structure (156) is provided on the dielectric sheet and comprises second graphene layers. Graphene sheets are placed between the first and second graphene layers. A barrier layer disconnects a conductive material from the first graphene structure. A growing layer is formed between the dielectric sheet and the second graphene structure and made from copper, aluminum and/or tungsten. USE - Capacitor for a semiconductor device (claimed). ADVANTAGE - The capacitor has increased storage capability and high permittivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device. Semiconductor device (100) Substrate (102) Interconnect structure (104) Graphene structure (156) Contact structure (160)