• 专利标题:   Fabrication of graphene nanoribbons used as field effect transistor, comprises positioning graphite sample, positioning container having disposed metal, heating to expel cloud of metal, injecting gas and depositing dislocation bands.
  • 专利号:   US7887888-B1
  • 发明人:   SIDOROV A N, OUSEPH P J, SUMANASEKERA G
  • 专利权人:   UNIV LOUISVILLE RES FOUND INC
  • 国际专利分类:   B05D001/04
  • 专利详细信息:   US7887888-B1 15 Feb 2011 B05D-001/04 201113 Pages: 8 English
  • 申请详细信息:   US7887888-B1 US489903 23 Jun 2009
  • 优先权号:   US489903

▎ 摘  要

NOVELTY - Fabrication of graphene nanoribbons comprises positioning graphite sample (22) in first cavity (20), positioning container in second cavity (30), with container having disposed metal, and heating container to expel cloud of metal from the container; injecting gas into second cavity; removing graphite sample from the chamber; and electrostatically depositing dislocation bands on substrate, removing dislocation bands from graphite sample and depositing on the substrate. USE - Method for fabricating graphene nanoribbons (claimed) used as a field effect transistor. ADVANTAGE - The method allows deposition of graphene nanoribbons on suitable substrate, produces long and narrow graphene ribbons with smooth edges, obtains graphene nanoribbons with smooth edges without extensive chemical treatments providing unique way to fabricate graphene nanoribbons without dramatically changing properties of the graphene itself, and provides convenient alternatives to lithography-based or chemical-based techniques for fabricating graphene ribbons. DETAILED DESCRIPTION - Fabrication of graphene nanoribbons comprises positioning graphite sample (22) in first cavity (20), positioning container in second cavity (30), with container having disposed metal, and heating container to expel cloud of metal from the container; injecting gas into second cavity of the chamber, with gas propelling the cloud of the metal through the opening defined by divider and into the first cavity of the chamber where it contacts the graphite sample to produce dislocation bands on graphite sample; removing graphite sample from the chamber; and electrostatically depositing dislocation bands on a substrate, removing dislocation bands from graphite sample and depositing on the substrate as graphene nanoribbons. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the cloud of metal contacting the graphite sample. Chamber (10) First cavity (20) Graphite sample (22) Second cavity (30) Divider (40) Opening (50)