• 专利标题:   Preparing single-layer graphene on the surface of ultra-nano diamond comprises pre-processing ultra-nano-diamond film for removing surface impurities and surface stress, forming metal layer and subjecting to high temperature annealing.
  • 专利号:   CN107902650-A
  • 发明人:   GUO J, WEI C, FENG Z, FANG Y, HE Z, WANG J, LIU Q, ZHOU C, GAO X
  • 专利权人:   13TH RES INST CHINA ELECTRONIC SCI TEC
  • 国际专利分类:   C01B032/184, C01B032/28
  • 专利详细信息:   CN107902650-A 13 Apr 2018 C01B-032/28 201837 Pages: 9 Chinese
  • 申请详细信息:   CN107902650-A CN11146672 17 Nov 2017
  • 优先权号:   CN11146672

▎ 摘  要

NOVELTY - Preparing single-layer graphene on the surface of ultra-nano diamond comprises (i) pre-processing ultra-nano-diamond film for removing surface impurities and surface stress; (ii) forming a metal layer on the nucleation surface of the pre-treated ultra-nanometer diamond film, where the metal layer is nickel layer and copper layer on upper surface of nickel layer or metal layer is a copper-nickel alloy layer; (iii) and subjecting ultra-nano diamond film on which the metal layer has been grown to high temperature annealing to form single layer of graphene by self-organization. USE - The method is useful for preparing single-layer graphene on the surface of ultra-nano diamond. ADVANTAGE - The single-layer graphene effectively avoids impurities.