▎ 摘　　要

NOVELTY - The method involves providing structure using multi-layer graphene in contact area of the graphene material (13,14) and metal using single-layer graphene (12) in channel region. The multilayer graphene is provided to contact the contact region with the metal or metal electrodes (15,16), layer number of multi-layer graphene is varied between 2 to 10 layers. The metal is made of titanium and gold, chromium and gold, button and gold, nickel and gold or platinum and gold. USE - Method for reducing graphene material and contact resistance of metal interconnection structure. ADVANTAGE - The graphene material and metal contact resistance of the structure are reduced, so as to reduce the graphene and metal resistor. Since the single layer graphene is used as channel material, the mobility carrier of graphene is ensured. The graphene FET device current is increased and transconductance and cut-off frequency of the device can be improved by improving the graphene FET asymmetry of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene material and metal contact resistance structure. Semiconductor substrate (10) Insulating layer (11) Single-layer graphene in channel region (12) Graphene materials (13,14) Metal electrodes (15,16)