• 专利标题:   Manufacturing method of non-catalytic substrate growth graphene, involves performing pre-heating process for preheating a substrate before additionally performing plasma-enhanced chemical vapor deposition.
  • 专利号:   KR2016059464-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04, C23C016/26, C23C016/513
  • 专利详细信息:   KR2016059464-A 26 May 2016 201642 Pages: 58
  • 申请详细信息:   KR2016059464-A KR027933 08 Mar 2016
  • 优先权号:   KR160619, KR027933

▎ 摘  要

NOVELTY - The method involves performing pre-heating process for preheating a substrate before additionally performing plasma-enhanced chemical vapor deposition (PECVD). The PECVD gas containing carbon is supplied. USE - Manufacturing method of non-catalytic substrate growth graphene. ADVANTAGE - The non-catalytic substrate growth graphene is manufactured reliably. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the manufacturing process of non-catalytic substrate growth graphene. Board layer (100) Carbon-included gas (300) Graphene (500)