▎ 摘　　要

NOVELTY - The method involves providing a substrate (504). Source and drain contacts (908) are formed on the substrate. A graphene channel is formed on the substrate connecting the source contact and the drain contact. A dielectric layer is formed on the graphene channel with a molecular beam deposition process. A gate contact (1716) is formed over the graphene channel and on the dielectric, where the gate contact is in a non-overlapping position with the source and drain contacts leaving exposed sections (1918) of the graphene channel between the gate contact and the source and drain contacts. USE - Method for fabricating a carbon-based semiconductor device e.g. graphene channel based nano-device such as integrated circuit chip, utilized in an end product e.g. toy and computer product. ADVANTAGE - The method allows carriers to easily escape through a dielectric by tunneling when either a valence or conduction band lies close to a Dirac point so as to provide a reliable and scalable technique to deposit uniform high-k dielectric layers on the graphene channel without use of seed layers to improve capacitance of the device, while inducing minimal impact to transport in the graphene channel at the same time, thus allowing a sample to be kept at low temperatures during deposition and providing dangling bonds to nucleate growth of the insulating layer, and hence hindering mobility of adsorbed species and obtaining high performance devices. DETAILED DESCRIPTION - The substrate is a silicon carbide wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of portions of a gate dielectric not covered by a gate metal contact that is etched away. Substrate (504) Source and drain contacts (908) Gate contact (1716) Exposed sections (1918)