▎ 摘　　要

NOVELTY - The method involves depositing a layer of a tin oxide film on graphene by using magnetron sputtering technique, where thickness of the sputtered tin oxide film is about 40 nm. Annealing treatment is performed on a structure to obtain doped graphene. The structure is placed in an annealing furnace under atmosphere of nitrogen, oxygen or air. USE - Method for doping large-range nanoparticle (np) continuously-adjustable graphene in an electronic information material and component field. ADVANTAGE - The method enables utilizing tin oxide with multi-phase characteristics to ensure different doping effect of the relative graphene with metal phase induced strong n-type doping, divalent tin oxide phase induced weak n-type doping and tetravalent tin oxide phase induced strong p-type characteristics for changing oxidation degree by annealing process so as to control proportion of phases and realize continuously-adjustable doping process of the graphene between the strong n-type and the strong p-type to realize large-range continuous regulation and controlling processes in a large range. The method enables avoiding single doping-type processing phenomenon and ensures effective doping control range and effective p-type doping control effect. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a tin oxide film doped with graphene.