• 专利标题:   Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.
  • 专利号:   EP2942326-A1, WO2015169624-A1, TW201546339-A, CN106232521-A, IN201627037879-A, KR2017009889-A, US2017057826-A1, EP3152159-A1, JP2017521339-W
  • 发明人:   STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E
  • 专利权人:   BASF SE, MAX PLANCK GES FOERDERUNG WISSENSCHAFTEN, MAX PLANCK GES FOERDERUNG WISSENSCHAFTEN, BASF SE
  • 国际专利分类:   C01B031/04, B08B003/08, C30B029/02, C01B032/182, C23C016/02, H01L029/16, C23C016/26, C23C016/46, C23C016/01, H01L021/314
  • 专利详细信息:   EP2942326-A1 11 Nov 2015 C01B-031/04 201582 Pages: 20 English
  • 申请详细信息:   EP2942326-A1 EP166997 05 May 2014
  • 优先权号:   EP166997

▎ 摘  要

NOVELTY - Preparation of graphene involves providing a substrate in a chemical deposition chamber which has a surface (S1), subjecting the substrate to thermal pretreatment while feeding at least one gaseous or supercritical oxidant into the chamber to bring the surface (S1) into contact with the oxidant and obtain a pretreated surface (S2), preparing graphene on the pretreated surface (S2) by chemical deposition. USE - Preparation of graphene (claimed) used as exciting material e.g. transparent flexible conducting electrodes, gas sensing, and post complementary metal-oxide semiconductor electronic devices. Uses include but are not limited to capacitors, field effect transistors, organic photovoltaic devices, organic light-emitting diodes, photo detectors, electrochemical sensors and energy-storing devices e.g. super capacitors, batteries and fuel cells. ADVANTAGE - The method enables preparation of graphene with improved quality and improved safety. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) device comprising graphene; and (2) use of gaseous or supercritical oxidant for thermal pretreatment of a substrate in a chemical deposition chamber.