▎ 摘　　要

NOVELTY - The gallium arsenide optical switch has a gallium arsenide substrate (1), a contact electrode (3), an external electrode (4), and a graphene layer (2), on the gallium arsenide substrate. A lower surface is provided with contact electrodes, and the two contact electrodes are used as the anode and cathode of the gallium arsenide photoconductive switch. The external electrode is provided on the surface of the two contact electrodes, and the graphene layer is provided between the two contact electrodes and the gallium arsenide substrate. The upper surface of the gallium arsenide substrate is also covered with a passivation layer (5), and the contact electrode in the direction from the graphene layer to the external electrode is a nickel layer, a germanium layer, a first aurum layer, a nickel layer and a second aurum layer in the order. The passivation layer is a silicon nitride passivation layer. USE - Gallium arsenide optical switch with heteroplane structure based on graphene interface layer. ADVANTAGE - The high-quality graphene is transferred to the target substrate and metal is plated on the surface to form a composite structure of gallium arsenide graphene metal. The current is not concentrated, and the heat generated is relatively small, which has a great effect on the heat dissipation and life of the device, when the electric field is homogenized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a process for preparing a graphene interface layer-based gallium arsenide photoconductive switch. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the gallium arsenide optical switch. Gallium arsenide substrate (1) Graphene layer (2) Contact electrode (3) External electrode (4) Passivation layer (5)