▎ 摘　　要

NOVELTY - Removing a graphene film grown on a surface of a metal substrate, comprises applying a support layer to an exposed surface of the graphene film to define a first structure having a graphene-metal interface, subjecting the first structure to an electrochemical process to form gas bubbles at the graphene-metal interface for causing the graphene and support layer to separate from the surface of the metal substrate as a second structure while substantially preserving the metal substrate, and processing the second structure to remove the support layer from the graphene film. USE - The method is useful for removing graphene film grown on surface of metal substrate (claimed), where the graphene film is useful for forming photovoltaic and electronics devices. ADVANTAGE - The method allows simple and economical removal of the graphene film grown on surface of the metal substrate with high efficiency and reduced energy consumption and without damaging the metal substrate and using large volumes of chemical baths in a convenient manner. The graphene film has high-quality, strength, flexibility, transparency and conductivity.