▎ 摘　　要

NOVELTY - The graphene manufacturing apparatus (10) has a substrate supporter (200) which is provided inside a reaction chamber (100), and is configured to support a substrate (G) inside the reaction chamber. A plasma generator (300) generates a plasma inside the reaction chamber. A first gas supply is configured to supply an inert gas into the reaction chamber at a first height from an upper surface of the substrate supporter in a height direction of the reaction chamber. A second gas supply is configured to supply a carbon source into the reaction chamber at a second height from the upper surface of the substrate supporter in the height direction of the reaction chamber. A third gas supply is configured to supply a reducing gas into the reaction chamber at a third height from the upper surface of the substrate supporter in the height direction of the reaction chambe, where the first height is greater than the second height, and the second height is greater than the third height. USE - Apparatus for manufacturing graphene by using plasma. ADVANTAGE - The graphene manufacturing apparatus has high electric mobility, excellent thermal characteristics, chemical stability, and wide surface area, and prevents the generation of cracks, pinholes, or overlayers during graphene growing. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming graphene based on using the graphene manufacturing apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene manufacturing apparatus. Graphene manufacturing apparatus (10) Reaction chamber (100) Substrate supporter (200) Plasma generator (300) Substrate (G)