• 专利标题:   Graphene manufacturing system, useful for growing graphene layers on insulated surface of work piece, comprises furnace body having working chamber, catalyst source, hydrogen source, and carbon feedstock source.
  • 专利号:   US2014044874-A1, TW201406652-A, TW457277-B1
  • 发明人:   TENG P, CHIU P, LU C, TENG P Y, CHIU P W, LU C C
  • 专利权人:   UNIV NAT TSINGHUA
  • 国际专利分类:   C23C016/26, B01J019/00, B01J023/70, B01J031/28, B01J035/00, C01B031/04
  • 专利详细信息:   US2014044874-A1 13 Feb 2014 C23C-016/26 201413 Pages: 10 English
  • 申请详细信息:   US2014044874-A1 US753223 29 Jan 2013
  • 优先权号:   TW128932

▎ 摘  要

NOVELTY - Graphene manufacturing system, comprises a furnace body (10) having a working chamber (11) for holding the work piece, a catalyst source, configured in the outside of the furnace body, where the catalyst source (20) is connected with the working chamber for providing the working chamber with gasiform catalyst (21) containing a transition metal element, a hydrogen source, connected with the working chamber for providing the working chamber with hydrogen, and a carbon feedstock source (30), connected with the working chamber for providing the working chamber with gasiform carbon feedstock. USE - The graphene manufacturing system is useful for growing graphene layers on an insulated surface of a work piece (claimed), where the graphene is useful for manufacturing electronic components such as transistors and solar cells, a touch screen, and a light board. ADVANTAGE - The graphene manufacturing system is capable of generating uniform graphene layers without using copper foils in a cost-effective manner. DETAILED DESCRIPTION - Graphene manufacturing system, comprises a furnace body (10) having a working chamber (11) for holding the work piece, a catalyst source, configured in the outside of the furnace body, where the catalyst source (20) is connected with the working chamber for providing the working chamber with gasiform catalyst (21) containing a transition metal element, a hydrogen source, connected with the working chamber for providing the working chamber with hydrogen, and a carbon feedstock source (30), connected with the working chamber for providing the working chamber with gasiform carbon feedstock. The catalyst source can react with the carbon feedstock and the hydrogen to catalyze the decomposition of the carbon feedstock for generating carbon atoms. The carbon atoms form the graphene layers directly on the insulated substrates of the work piece. An INDEPENDENT CLAIM is included for manufacturing graphene, applied to grow graphene layers on an insulated surface of a work piece, comprising preparing a work piece, preparing a catalyst having a gasiform transition metal element, preparing a carbon feedstock, preparing hydrogen, mixing the carbon feedstock, the hydrogen and the catalyst over the work piece, where the flow rate of the catalyst is 4-1200 sccm, and warming the carbon feedstock, the hydrogen and the catalyst to the temperature of 200-1200 degrees C, and maintaining the pressure inside the chamber of 1 mTorr to 800 Torr to make the catalyst source. DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-section of a graphene manufacturing system. Furnace body (10) Working chamber (11) Catalyst source (20) Gasiform catalyst (21) Carbon feedstock source. (30)