• 专利标题:   Growing nanostructured single layer graphene film involves selecting copper foil and then annealing selected material with graphene under mixed atmosphere of argon and hydrogen high temperature.
  • 专利号:   CN104445164-A, CN104445164-B
  • 发明人:   DONG J, HE H, LI K, WANG H, ZENG X
  • 专利权人:   UNIV YANGZHOU
  • 国际专利分类:   B82Y030/00, C01B031/04, C23C016/26, C23C016/56, C23C018/42
  • 专利详细信息:   CN104445164-A 25 Mar 2015 C01B-031/04 201535 Pages: 8 Chinese
  • 申请详细信息:   CN104445164-A CN10667089 18 Nov 2014
  • 优先权号:   CN10667089

▎ 摘  要

NOVELTY - Growing nanostructured single layer graphene film involves selecting a copper foil and then annealing the selected material with graphene under mixed atmosphere of argon and hydrogen at high temperature. The annealed material is purged with methane and hydrogen and then the obtained material is cooled to room temperature under an argon atmosphere. The cooled material is subjected to ozone treatment and then the ozone-treated graphene foil substrate is immersed in an aqueous solution of silver nitrate to obtain the desired product. USE - Method for growing nanostructured single layer graphene film (claimed). ADVANTAGE - The method enables to grow nanostructured single layer graphene film in a cost-effective, environment-friendly and simple manner.