▎ 摘　　要

NOVELTY - The method involves obtaining a β-gallium oxide substrate, growing a layer of low-doped gallium nitride layer on the substrate of the β-gallium oxide to form a channel layer, growing layer of heavily doped gold nitrate cap on the channel layer, placing in an oxygen atmosphere to anneal to obtain a heavily-deposited gold nitride cap layer, etching the heavily dimethyl graphene cap layer in a region, retaining the heavily doped graphene caps in the ohmic area, depositing a titanium/silver/silver metal stack on the heavily doped metal nitroxide cap layer of the ohmic region, performing thermal annealing to form an electrode of a source and a drain electrode of an Ohmic contact, growing the layer of aluminum oxide as a dielectric layer, etching to remove the dielectric layer, depositing nickel/gold lamination on the dielectric layer as grid metal, manufacturing interconnection lead and finishing the manufacturing of the gallium oxide base power transistor of the low-ohm contact resistor. USE - The method is useful for manufacturing gallium oxide-based power transistor with loom contact. ADVANTAGE - The method forms a heavily-doped gallium oxide cap layer through the oxygen atmosphere annealing of the gallium-nitride layer at high temperature, reduces the lattice mismatch between the two, as the contact layer, then depositing titanium/gold metal stack on to form good ohm contact so as to reduce the on-resistance of the device, after finishing the gate manufacturing and leading out the electrode to form the gallium-nitride-based power transistor with low ohmic contact resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a gallium oxide-based power transistor device of low-ohm-contact resistor.