• 专利标题:   Metalizing structure and manufacturing method of graphene oxide are induced after surface modification.
  • 专利号:   TW201929049-A, TW667694-B1
  • 发明人:   YEN M, YEN M H
  • 专利权人:   IND TECHNOLOGY RES INST
  • 国际专利分类:   H01L021/203, H01L021/60, H01L023/48
  • 专利详细信息:   TW201929049-A 16 Jul 2019 H01L-021/203 201978 Pages: 21 Chinese
  • 申请详细信息:   TW201929049-A TW145043 21 Dec 2017
  • 优先权号:   TW145043

▎ 摘  要

NOVELTY - Graphene oxide is as an insulating barrier for metal deposition. The chemical properties of graphene oxide are induced after surface modification. In the process of metallization for semiconductor process, it can be used as a catalyst for electroless plating, so that the metal is only deposited in the patterned area. It provides the advantages of improving reliability and yield. Metallized structure comprises a substrate, a graphene oxide catalytic layer and metal layer, can be widely used in metallization for fine pitch of semiconductor packaging, fine pitch lines of printed circuit board, and lines, solar fine electrode, touch panel, display and so on.