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  • 专利标题:   Substrate used in graphene transfer technology, consists of silicon dioxide layer and semiconductor silicon layer, and forms PN junction which can easily access light source when used with appropriate forward voltage.
  • 专利号:   CN105914136-A
  • 发明人:   HUANG S, QIU J
  • 专利权人:   NANJING ANJING TAIHE PHOTOELECTRIC TECHNOLOGY CO LTD
  • 国际专利分类:   C01B031/04, H01L021/02, H01L021/225, H01L033/00
  • 专利详细信息:   CN105914136-A 31 Aug 2016 H01L-021/02 201675 Pages: 6 Chinese
  • 申请详细信息:   CN105914136-A CN10448527 21 Jun 2016
  • 优先权号:   CN10448527

▎ 摘　　要

NOVELTY - A substrate consists of silicon dioxide layer and semiconductor silicon layer, and forms PN junction which can easily access the light source when used with the appropriate forward voltage. USE - Substrate used in graphene transfer technology.