▎ 摘　　要

NOVELTY - The graphene electronic device (100) has first conductive layer (12) and semiconductor layer (13) that are positioned on a first region of an intermediate layer (11). A second conductive layer is arranged on a second region of the intermediate layer. A graphene layer (15) is positioned on the intermediate layer, the semiconductor layer and the second conductive layer. A flash memory region and a ferroelectric memory region are positioned on the graphene layer. The flash memory region is corresponded to the first region of the intermediate layer. USE - Graphene electronic device. ADVANTAGE - The graphene electronic devices are provided with improved electrical characteristics by using graphene. The intermediate layer is provided to protect the graphene layer and the conductive layers during formation of graphene electronic device. The support structure is provided to support the layers of graphene electronic device, and formed in manufacturing processes for processing stability. The support structure is provided with material having relatively high attachability to the intermediate layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming graphene electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene electronic device. Intermediate layer (11) First conductive layer (12) Semiconductor layer (13) Graphene layer (15) Graphene electronic device (100)