▎ 摘　　要

NOVELTY - Preparation of flexible graphene-silicon solar cell involves subjecting surface of silicon wafer with inverted pyramid structure to chemical passivation and/or field passivation, dispersing graphene quantum dots in an organic solvent, spin-coating resultant product on surface of the wafer, calcining, forming a conductive layer on resultant product, polishing, applying indium-gallium alloy or conductive silver paste on resultant product, adhering ohmic electrode to the resultant product, and arranging resultant product, and positive and negative electrodes. USE - Preparation of flexible graphene-silicon solar cell. ADVANTAGE - The method enables economical preparation of flexible graphene-silicon solar cell having excellent anti-reflection coating effect and reduced surface area of silicon, with reduced usage amount of silicon. DETAILED DESCRIPTION - Preparation of flexible graphene-silicon solar cell involves subjecting surface of silicon wafer with inverted pyramid structure to chemical passivation and/or field passivation, dispersing graphene quantum dots in an organic solvent, spin-coating resultant product on surface of the wafer, calcining at 50-100 degrees C for 0.1-5 hours, forming a conductive layer on resultant product by physical vapor deposition, transferring lamellar graphene to surface of the wafer, polishing to remove natural oxide layer, applying indium-gallium alloy or conductive silver paste on resultant product, adhering ohmic electrode to the resultant product, and arranging resultant product, and positive and negative electrodes. The silicon wafer with inverted pyramid structure is prepared by washing silicon wafer, etching in sodium hydroxide or potassium hydroxide solution with concentration of 20-90% at 25-90 degrees C for 0.2-12 hours, sealing with glue, immersing in hydrogen fluoride solution with concentration of 1-40% for 1-60 minutes, removing oxide layer from resultant product, immersing in etching solution containing 0.1-10 mol/L hydrogen fluoride, 0.01-0.4 mol/L copper nitrate and 0.5-5 mol/L hydrogen peroxide, etching at 25-60 degrees C for 3-60 minutes, placing in 5-50% nitric acid solution for 1-50 minutes, then in 1-10% hydrogen fluoride solution for 1-30 minutes, and washing with deionized water.