• 专利标题:   Graphene/boron nitride layered heterostructure is prepared by covering graphene surface with boron nitride and forming graphene/boron nitride multilayer composite heterostructure.
  • 专利号:   CN110510604-A
  • 发明人:   YIN H, SUN X, GAO W
  • 专利权人:   UNIV JILIN
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B021/064, C01B032/194
  • 专利详细信息:   CN110510604-A 29 Nov 2019 C01B-032/194 201997 Pages: 8 Chinese
  • 申请详细信息:   CN110510604-A CN10857578 09 Sep 2019
  • 优先权号:   CN10857578

▎ 摘  要

NOVELTY - Graphene/boron nitride layered heterostructure is prepared by covering graphene surface with boron nitride and forming graphene/boron nitride multilayer composite heterostructure with atomic thickness and a transverse length of 30-80 mu m. USE - As graphene/boron nitride layered heterostructure. ADVANTAGE - The graphene/boron nitride layered heterostructure is simple, does not require any metal catalyst, has high material purity and excellent crystallinity, combines the excellent properties of both graphene and boron nitride, and provides a technical solution for the industrial production of two-dimensional materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the graphene/boron nitride layered heterostructure involving (i) adding dispersant to deionized water, ultrasonically and magnetically stirring to form stable dispersion, adding boron oxide, stirring the mixture at a constant temperature until a thick slurry is formed, coating on the surface of corundum boat and vacuum drying to obtain a precursor, and (ii) adding the corundum boat with precursor to a vacuum tube furnace, heating at a certain temperature in an argon atmosphere, introducing ammonia gas for reaction, naturally cooling to room temperature to obtain a preliminary product and processing to obtain the product.