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  • 专利标题:   Anisotropic semiconductor film for microelectronics, optics, communication and computer technology, has solid layer containing material having predominantly planar graphene-like carbon-based structures and preset thickness.
  • 专利号:   WO2008056126-A1, EP2095444-A1, CN101536205-A, US2010038629-A1, JP2010508677-W, US8124966-B2, US2012122274-A1, US8222074-B2
  • 发明人:   LAZAREV P, LAZAREV P I
  • 专利权人:   CARBEN SEMICON LTD, CARBEN SEMICON LTD, CARBEN SEMICON LTD
  • 国际专利分类:   C01B031/04, H01L051/05, H01L051/30, H01L051/40, H01L021/20, H01L029/12, H01L021/368, H01L029/08
  • 专利详细信息:   WO2008056126-A1 15 May 2008 H01L-051/30 200872 Pages: 59 English
  • 申请详细信息:   WO2008056126-A1 WOGB004223 06 Nov 2007
  • 优先权号:   GB022150

▎ 摘　　要

NOVELTY - An anisotropic semiconductor film has a solid layer containing material having predominantly planar graphene-like carbon-based structures on a substrate. The solid layer possesses anisotropy of conductivity. The layer has thickness of 5-1000 nm. USE - Anisotropic semiconductor film is used for microelectronics, optics, communication, computer technology and flat panel display. ADVANTAGE - The anisotropic semiconductor film has excellent electrical conductivity, stability, and durability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of the anisotrophic semiconductor film.