▎ 摘　　要

NOVELTY - Measuring of electrical resistivity of a thin film formed on a metal substrate which involves (a) measuring current-voltage property of a laminated component containing thin film using conductive atomic force microscope, (b) measuring current-voltage property of the metal substrate using conductive atomic force microscope. The contact resistance of the laminated component and thin film formed on a cantilever of the conductive atomic force microscope obtained from the inclination of the current voltage curve and metal substrate obtained from (a) is Rctf, and contact resistance of the cantilever of the conductive atomic force microscope obtained from the inclination of the current voltage curve and metal substrate obtained from (b) is Rcm. USE - Measuring of electrical resistivity of thin film formed on metal substrate used for electronic component and electronic component apparatus. DETAILED DESCRIPTION - Measuring of electrical resistivity of a thin film formed on a metal substrate which involves (a) measuring current-voltage property of a laminated component containing thin film formed on the metal substrate using conductive atomic force microscope, (b) measuring current-voltage property of the metal substrate using conductive atomic force microscope. The contact resistance of the laminated component and thin film formed on a cantilever of the conductive atomic force microscope obtained from the inclination of the current voltage curve and metal substrate obtained from (a) is Rctf, and contact resistance of the cantilever of the conductive atomic force microscope obtained from the inclination of the current voltage curve and metal substrate obtained from (b) is Rcm. The electrical resistivity of the thin film formed on the metal substrate is measured using a formula: ( rho )th = ((( rho )a +( rho )m )Rctf/Rcm)-( rho )a, where ( rho )a is an electrical resistivity of the cantilever of the conductive atomic force microscope, ( rho )m is an electrical resistivity of the metal substrate, ( rho )th is electrical resistivity of the thin film. INDEPENDENT CLAIMS are included for the following: (1) manufacture of electronic component with the thin film formed on the metal substrate, which involves forming laminated component comprising thin film on the metal substrate, measuring the electrical resistivity of the thin film formed on the metal substrate, and determining the electrical resistivity of the thin film measured with predetermined reference value; and (2) manufacture of electronic component apparatus, which involves forming thin film component on the metal substrate, and evaluating electroconductivity of the thin film formed on metal substrate in electroconductive evaluation component. The electroconductive evaluation is carried out using: (a) atomic force microscope which measures current-voltage property of the laminated component containing thin film formed on metal substrate and current-voltage property of the metal substrate, (b) electrical-resistivity of the thin film, and (c) determining the electrical resistivity of thin film by electrical resistivity calculation component satisfying predetermined reference value. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of catalytic current evaluation by conductive atomic force microscope. Measurement sample (101) Cantilever of conductive atomic force microscope (102) Sample stand (103)