▎ 摘　　要

NOVELTY - Method for purifying graphene film involves providing a first graphene film, a first protective gas, hydrogen, and a first carbon source, in a mixed atmosphere of the first protective gas and the hydrogen gas, etching the defect positions of the first graphene film to obtain a second graphene film having an etched area, adding first carbon source, and growing graphene on the etched area of the second graphene film through chemical vapor deposition reaction to obtain the film. USE - The method is useful for purifying graphene film. ADVANTAGE - The method realizes effect of seamless splicing, and provides complete, high-quality and high-purity graphene film.