• 专利标题:   Bendable flexible two-dimensional material heterojunction photoelectric detector for use in e.g. aerospace field, has metal electrode formed to form detector with source and drain electrodes and back gate electrode.
  • 专利号:   CN115568235-A
  • 发明人:   ZHANG Q, ZHOU F, ZHENG M, LIU Y, ZHAO L, YANG Z
  • 专利权人:   JINAN QUANTUM TECHNOLOGY INST
  • 国际专利分类:   H10K030/60, H10K030/80, H10K039/30, H10K071/00
  • 专利详细信息:   CN115568235-A 03 Jan 2023 H10K-030/60 202309 Chinese
  • 申请详细信息:   CN115568235-A CN11178049 26 Sep 2022
  • 优先权号:   CN11178049

▎ 摘  要

NOVELTY - Bendable flexible two-dimensional material heterojunction photoelectric detector comprises a flexible substrate, a graphene, a telluride, a source and drain electrode and a back gate electrode. The graphene is formed by introducing external carbon source on a composite metal substrate. The tellurides are grown on the graphene, and forms a two-dimethylsilyl-sulfonate (2D) material heterjunction with the graphene. The flexible substrate is used for supporting the 2D material heterijunction. The 3D substrate supported with 2D heterojunctions is patterned by a micro-nano processing sample and a metal electrode. USE - Bendable flexible two-dimensional material heterojunction photoelectric detector used in various fields of military and national economy such as aerospace, optical communication, industrial control and near infrared imaging. ADVANTAGE - The photoelectric detector has high sensitivity, ultra-high detection rate and self-driving and excellent characteristics. The method is simple and reliable. The manufacturing cost is low and the method can be produced in large area. The detector has wide detection range and high response degree, and the maximum bending degree is 270 degrees. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of flexible two-dimensional material heterojunction infrared photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the bendable flexible two-dimensional material heterojunction photoelectric detector. 2Lraman characteristic peak 301Graphene 302Telluride 401Source-drain electrode 402Back-gate electrode