▎ 摘　　要

NOVELTY - The method involves forming a graphene layer (132) on a catalyst metal layer. A stuffing layer (134) for covering a part of the graphene layer is formed. A carrier layer is formed on the graphene layer. The graphene layer is transferred on a substrate. A catalyst metal layer is removed from a lower-side of the graphene layer. The carrier layer is formed on a lamination structure (130) of the stuffing layer. Heat-treating process of the lamination structure of the stuffing layer and the graphene layer is performed. The stuffing layer is deposited on the graphene layer in island type. USE - Method for manufacturing an electronic component. ADVANTAGE - The method enables forming the stuffing layer on the graphene layer utilized as a transparent electrode layer, and transferring the graphene layer on the substrate so as to manufacture an electronic component with high quality and improve electrical characteristic and light-transmissive characteristic of the electronic component. DETAILED DESCRIPTION - The stuffing layer is made of metal that comprises as tantalum, titanium, molybdenum nitride, tungsten, ruthenium, cobalt, indium tin oxide, indium zinc oxide, fluorine-doped tin oxide, antimony tin oxide, aluminum-doped zinc oxide and gallium-doped zinc oxide. An INDEPENDENT CLAIM is also included for an electronic component. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of an electronic component. Bearing substrate (110) Catalyst metal layer (120) Lamination structure (130) Graphene layer (132) Stuffing layer (134)