▎ 摘　　要

NOVELTY - The semiconductor device (100) has an FET (190) comprising source and drain regions (108a,108b) formed in a substrate (102), with drain and source terminals (112,114) formed on the source and drain regions, respectively. A channel region is formed between the source and drain regions. A fuse (195), which includes a graphene layer (150), is electrically connected to the source terminal. The fuse further includes a fuse terminal (116) formed on an end portion of the graphene layer. USE - Semiconductor device, e.g. electronic fuse, for integrated circuit. ADVANTAGE - Enables provision of an electronic fuse structure which contains graphene which has a conductivity similar to that of metal such that passing high current through graphene causes the graphene to burn away, thus, the graphene content serving as an electrical fuse. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the semiconductor device. Semiconductor device (100) Substrate (102) Source region (108a) Drain region (108b) Drain terminal (112) Source terminal (114) Fuse terminal (116) Graphene layer (150) FET (190) Fuse (195)