▎ 摘　　要

NOVELTY - A resist mask is formed (ST1) on graphene film of a to-be-processed material. The to-be-processed material is exposed to oxygen radicals to remove the resist residue (ST4) on the graphene film, in the processing of the to-be-processed material. USE - Processing of to-be-processed material used for manufacture of electronic devices e.g. field effect transistor, a transparent electrode, or radio frequency transistor. ADVANTAGE - The method enables efficient processing of to-be-processed material having graphene film, with suppressed damage. Removal of resist residue is enabled. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart of processing of to-be-processed material having graphene film. (Drawing includes non-English language text) Formation of resist mask (ST1) Etching process (ST2) Removal of resist mask (ST3) Removal of residue (ST4) Formation of metal film (ST7)