▎ 摘　　要

NOVELTY - The structure has a semiconductor chip assembly provided with a semiconductor chip and a chip gate line. The semiconductor chip is arranged on a metal component layer. A first cooling element is arranged on the semiconductor chip. A second cooling element is arranged in a containing cavity. An end of the chip gate line is sequentially insulated through the first cooling element and a metal layer. The metal layer is a copper metal layer and a a molybdenum metal layer. The semiconductor chip is a silicon-based insulated gate bipolar transistor (IGBT) chip. The first cooling element is a single-layer graphene structure or a multi-layer graphene structure. The second cooling piece is a phase-change material structure. The phase change material structure is a solid phase change material structure, a phase-change liquid structure, solid-liquid phase change material structure or solid-solid phase change material structure. USE - Power semiconductor structure for a circuit breaker transfer branch assembly (claimed). ADVANTAGE - The structure avoids short circuit of the power grid, quickly reduces the temperature of the semiconductor chip through the first cooling element and the second cooling element, and maintains the temperature uniformity of the chip so as to improve the reliability of the safety module. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a power semiconductor structure.