• 专利标题:   Graphene cell has metal electrode that is provided with silicon nitride film and N type graphene thin film, P type substrate crystal silicon structure that is connected with N type thin film graphene structure.
  • 专利号:   CN204481052-U
  • 发明人:   LIN Q
  • 专利权人:   LIN Q
  • 国际专利分类:   H01L035/00, H01L035/22
  • 专利详细信息:   CN204481052-U 15 Jul 2015 H01L-035/22 201563 Pages: 6 Chinese
  • 申请详细信息:   CN204481052-U CN20148877 16 Mar 2015
  • 优先权号:   CN20148877

▎ 摘  要

NOVELTY - The utility model claims a graphene cell and traditional cell production and solving the technology process complex, production cost is a problem. The top down in turn including upper metal electrode, lower silicon nitride film, N type graphene thin film, P type substrate crystal silicon chip and metal electrode, N type graphene thin film is adhered on one side on the silicon nitride film, the other side is adhered on the P type substrate crystal on silicon chip, upper metal electrode through silicon nitride thin film connected to one end N type graphene thin film and the lower metal electrode through P type substrate crystal silicon piece connected to the other end of N type thin film of graphene. This utility model new graphene cell structure and technique is simple and production cost low, the safety reliability, using life long, stability is good, to human body and environment and no harm.