▎ 摘　　要

NOVELTY - Preparing substrate of multiple graphene films involve subjecting metal substrate to high temperature annealing at 900-1050 degrees C for greater than or equal to 30 minutes and then cooling metal substrate to room temperature. The layer of carbon solution is coated on the metal substrate. The solution is solidified. The metal substrate coated with the solid carbon source is added to chemical vapor deposition reaction chamber. The temperature of decomposition reaction chamber is raised to recombine carbon source and carbon atoms into graphene. The carbon molecules diffuse to the entire metal substrate. USE - Method for preparing substrate of multiple graphene films (claimed). ADVANTAGE - The method enables to prepare substrate of multiple graphene films in quick and cost-effective manner that has low energy consumption. DETAILED DESCRIPTION - Preparing substrate of multiple graphene films involve subjecting metal substrate to high temperature annealing at 900-1050 degrees C for greater than or equal to 30 minutes and then cooling metal substrate to room temperature. The layer of carbon solution is coated on the metal substrate. The solution is solidified. The metal substrate coated with the solid carbon source is added to chemical vapor deposition reaction chamber. The temperature of decomposition reaction chamber is raised to recombine carbon source and carbon atoms into graphene. The carbon molecules diffuse to the entire metal substrate, graphene nuclei spreads around and continue to grow epitaxially to obtain graphene film. The graphene and the substrate are cooled to obtain multiple graphene films.