▎ 摘　　要

NOVELTY - Processing of thin film involves providing an electron transport film layer (101) using a metal oxide as an electron transport material, and annealing the electron transport film layer with pulsed light (106) in a protective gas environment with an oxygen content of 25-40 ppm. The pulsed light has a frequency of 1.5-4 Hz, and an energy of 1.20-2.0 J/cm2. USE - Processing of thin film used for manufacturing LED (all claimed). ADVANTAGE - The method consumes time, reduces the oxygen vacancies of the metal oxide, the amount of electrons in the electron transport film, electron concentration of metal oxides, conductivity and thermal damage to the device during the annealing process, improves electrical properties, unbalanced charge injection of devices based on the electron transport film and residual moisture on device performance, remove excess moisture inside the electron transport layer, and provides LED having excellent electron transport performance and service life. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of LED, which involves providing a substrate, and forming a electrode (e1), a hole transport layer, a light-emitting layer, an electron transport film layer and an electrode (e2) in layers on the substrate, and processing the electron transport film layer, and annealing the electron transport film layer with pulsed light in a protective gas environment. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of treating an electron transport film layer using pulsed light. 101Electron transport film layer 104Sealed container 106Pulse light 107Injection port