▎ 摘　　要

NOVELTY - Manufacture of graphene involves forming a product nucleus of carbon 6-membered ring on the main surface of a substrate, forming a carbon 6-membered ring two-dimensionally around the product nucleus at 300 degrees C or less to form a graphene film. USE - Manufacture of graphene used for manufacturing electronic device (all claimed) e.g. field effect transistor and sensor. ADVANTAGE - The method enables manufacture of monolayer graphene at low temperature with high quality. The decomposition efficiency of hydrocarbon gas can be improved. The efficient electronic device manufactured using the graphene has excellent electroconductivity, and high electron/hole mobility, non-elastic electronic conductivity and spin conductivity, dynamic strength, light absorption, light emission and heat conduction. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of electronic device, which involves contacting metal having a catalytic action of graphene synthesis and having melting point of 400 degrees C or less with a resist pattern formed on the main surface of the substrate, supplying a gas-containing hydrocarbon in a state of holding the metal to a temperature above the melting point, growing graphene to a contact interface with the metal of the substrate main surface, and graphenizing the resist pattern to form a circuit; (2) graphene, which comprises several domains containing a set of carbon 6-membered rings. Each domain has a product nucleus of the carbon 6-membered ring in the domain, and the density is 1x 106 cm-2 or less; and (3) electronic device.