▎ 摘　　要

NOVELTY - Manufacture of side grid graphene transistor involves growing carbon-silicon carbide (3C-SiC) film on substrate, cooling, forming silica deposited layer using plasma-enhanced chemical vapor deposition, forming pattern windows of side grid electrode, source electrode, drain electrode and conducting channel of side grid transistor, exposing 3C-SiC film, reacting with carbon tetrachloride, forming carbon membrane, depositing nickel membrane on graphene, annealing, depositing metal palladium/gold layer on graphene sample wafer, forming metal electrode, forming photomask, and drying. USE - Manufacture of side grid graphene transistor (claimed). ADVANTAGE - The side grid graphene transistor is manufactured efficiently with high carrier mobility, excellent transport property, and suppressed scattering effect. DETAILED DESCRIPTION - Manufacture of side grid graphene transistor involves cleaning silicon substrate, placing silicon substrate in chemical-vapor deposition system, vacuumizing under pressure of 10-7 mbar in hydrogen atmosphere, heating to 1000-1200 degrees C for 4-8 minutes, growing carbonized layer on substrate, passing propane gas and silane gas into reactor having carbonized layer on substrate, growing carbon-silicon carbide (3C-SiC) film at 1200-1350 degrees C, cooling to room temperature, forming silica deposited layer with thickness of 0.5-1 mu m using plasma-enhanced chemical vapor deposition, forming pattern windows of side grid electrode, source electrode, drain electrode and conducting channel of side grid transistor in a photoetching mode, exposing 3C-SiC film, reacting with carbon tetrachloride at 800-1000 degrees C, forming carbon membrane, removing residual silica, depositing nickel membrane on graphene through electron beam evaporation, annealing in argon atmosphere at 1000-1200 degrees C for 15-25 minutes, forming pattern of side grid graphene transistor, depositing metal palladium/gold layer on graphene sample wafer, forming metal electrode, forming photomask using polymethyl methacrylate (PMMA) resin solution, heating for 60 seconds, etching using oxygen gas, immersing in acetone for 10 minutes to remove residual PMMA, and drying.