• 专利标题:   Dual-band graphene chip used in detection device, contains silicon layers, quantum dot-reinforced graphene layer for detecting medium-wave, long-wave or very long-wave infrared light, and epoxy resin adhesive layers.
  • 专利号:   CN112186063-A
  • 发明人:   ZHOU P, LIU M, XING W
  • 专利权人:   11TH RES INST CHINA ELECTRONICS TECHNOLO
  • 国际专利分类:   G01D005/34, G01D005/40, H01L031/0352, H01L031/101, H01L031/18
  • 专利详细信息:   CN112186063-A 05 Jan 2021 H01L-031/101 202116 Pages: 11 Chinese
  • 申请详细信息:   CN112186063-A CN10944400 10 Sep 2020
  • 优先权号:   CN10944400

▎ 摘  要

NOVELTY - A dual-band graphene detection chip comprises a silicon layer (S1), a quantum dot-reinforced graphene layer (G1), an epoxy resin adhesive layer (E1), a silicon layer (S2), a quantum dot-reinforced graphene layer (G2) and an epoxy resin adhesive layer (E2), which are laminated in sequence from bottom to top. The quantum dot-enhanced graphene layer (G1) is used for detecting medium-wave infrared light, long-wave infrared light or very long-wave infrared light. The quantum dot-enhanced graphene layer (G2) is used for detecting visible light, short-wave infrared light or medium-wave infrared light. USE - Dual-band graphene chip is used in detection device (claimed). ADVANTAGE - The dual-band graphene chip has excellent detection rate and response speed. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a dual-band graphene detection device; and (2) preparation of the dual-band graphene detection chip.