• 专利标题:   Piezoresistive microwave power detecting system has cantilever beam whose bottom end is butted with upper surface of high-resistance silicon substrate, and whose upper portion is coated with graphene layer.
  • 专利号:   CN114019254-A
  • 发明人:   LI C, MA J, WANG D
  • 专利权人:   ZHANGJIAGANG XINWEI SEMICONDUCTOR TECHNOLOGY CO LTD
  • 国际专利分类:   G01R029/08, G01R031/00
  • 专利详细信息:   CN114019254-A 08 Feb 2022 G01R-029/08 202221 Chinese
  • 申请详细信息:   CN114019254-A CN11311956 08 Nov 2021
  • 优先权号:   CN11311956

▎ 摘  要

NOVELTY - The system has a high-resistance silicon substrate (1) whose upper side is provided with a signal line (2). The two sides of the signal line are provided with ground wires (3) in parallel manner. An upper side of signal line is connected with a cantilever beam (4). A bottom end of the cantilever beam is fixed with an upper surface of the high-resistant silicon substrate. A graphene layer (5) is coated on an upper end of a graphene sheet. The signal line comprises a first signal line and a second signal line. USE - Piezoresistive microwave power detecting system used in field of microelectronic technology, such as coplanar waveguide used in modern wireless communication. ADVANTAGE - The system limits a signal wire through a limiting bridge, so that an insulating layer is insulated and protected by the signal wire. The system allows the signal line to avoid being interfered by the ground wire when transmitting the microwave signal. The ground wire is symmetrically distributed with respect to a central line of the high-resistance silicon substrate, and a signal line is located below the cantilever beam. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the detecting system. High resistance silicon substrate (1) Signal line (2) Ground wire (3) Cantilever beam (4) Graphene layer (5) Limiting bridge (6) Adhesive layer (7)