▎ 摘　　要

NOVELTY - The transistor has a source electrode and a drain electrode arranged in a bipolar graphene channel, where the source electrode and the drain electrode are made of an inert conductive metal material, gold or platinum material. The bipolar graphene channel is connected to a top gate electrode by a ferroelectric thin film medium e.g. polyvinylidene fluoride thin film medium, a cerium oxide thin film medium, a cerium zirconium oxide thin film medium and a lead zirconate titanate thin film medium such that the top gate electrode effectively regulates a channel conductance and a three-terminal adjustable ferroelectric graphene transistor. USE - Ferroelectric graphene transistor for use in a human brain nerve synapse simulating device (claimed). ADVANTAGE - The transistor can improve structure design of the three-terminal ferroelectric graphene transistor and specific materials adopted by the structural layers, so that a three-terminal device with a source, a drain and a grid can be realized and can realize better compatible with a SNN algorithm so as to simulate human brain sudden contact. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a human brain nerve synapse simulating device control method. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a ferroelectric graphene transistor for use in a human brain nerve synapse simulating device. '(Drawing includes non-English language text)'