• 专利标题:   Gas sensor for use in gas detection system for detecting chemical substance in nitrogen monoxide, has first electrode arranged with graphene film, and second and third electrodes that are provided in surface of semiconductor layer.
  • 专利号:   JP2018091699-A
  • 发明人:   SATO S, HAYASHI K
  • 专利权人:   FUJITSU LTD
  • 国际专利分类:   G01N027/12, G01N027/00
  • 专利详细信息:   JP2018091699-A 14 Jun 2018 G01N-027/12 201844 Pages: 16 Japanese
  • 申请详细信息:   JP2018091699-A JP234712 02 Dec 2016
  • 优先权号:   JP234712

▎ 摘  要

NOVELTY - The sensor (10) has a semiconductor layer (101) arranged in a first detection part (100) or a second detection part (200), where electrical property of the first detection part is changed according to concentration of first gas of a detection chamber (11), and electrical property of the second detection part is changed according to concentration of second gas of the detection chamber. A graphene film (111) is provided in the semiconductor layer along an upper direction. A barrier film (104) is arranged between the semiconductor layer and the graphene film. A first electrode (105g) is arranged with the graphene film. A second electrode (105s) and a third electrode (105d) are provided in a surface of the semiconductor layer as a downward part of the barrier film is interposed between the second and third electrodes. USE - Gas sensor for use in a gas detection system (claimed) for detecting chemical substance in gas i.e. nitrogen monoxide, to point out correlation of stomach cancer and concentration of ammonia in expired-air, and correlation of asthma and concentration of gas in expired-air. ADVANTAGE - The sensor utilizes the detection parts to detect the gas by high sensitivity. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a gas sensor. '(Drawing includes non-English language text)' Gas sensor (10) Detection chamber (11) Detection parts (100, 200) Semiconductor layer (101) Barrier film (104) Electrodes (105d, 105g, 105s) Graphene film (111)