• 专利标题:   Multilayer thin film having excellent barrier performance and mechanical flexibility useful in optical device, comprises graphene layer, first barrier layer which heals defect of graphene layer, conductive layer, and second barrier layer.
  • 专利号:   KR2020014123-A, KR2154242-B1
  • 发明人:   KIMHYUNGKEUN, CHO S M, KIM K S
  • 专利权人:   KOREA ELECTRONICS TECHNOLOGY INST, MCK TECH CO LTD
  • 国际专利分类:   C23C014/14, C23C016/26, C23C016/455, C23C028/00, C23C028/04
  • 专利详细信息:   KR2020014123-A 10 Feb 2020 C23C-028/00 202020 Pages: 12
  • 申请详细信息:   KR2020014123-A KR089598 31 Jul 2018
  • 优先权号:   KR089598

▎ 摘  要

NOVELTY - Multilayer thin film comprises a graphene layer (120); a first barrier layer (130) which heals defect of the graphene layer positioned on the graphene layer; a conductive layer (140) located on the first barrier layer; and a second barrier layer (150) located on the conductive layer. USE - The multilayer thin film is useful in optical device. ADVANTAGE - The multilayer thin film has excellent barrier performance and mechanical flexibility, exhibits excellent conductivity and flexibility while inducing light scattering on surface when used in optical device, and increases optical efficiency of optical device. The method provides multilayer thin film by preventing defects in the graphene layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for producing multilayer thin film comprising either: (a) forming graphene layer on metal substrate (110) by chemical vapor deposition, (b) forming the first barrier layer on the graphene layer by atomic layer deposition process, (c) forming the conductive layer on the first barrier layer by sputtering process, and (d) forming the second barrier layer on the conductive layer; or (a1) forming irregularities on the metal substrate, (b1) forming the graphene layer on metal substrate by chemical vapor deposition, (c1) forming the first barrier layer on the graphene layer by atomic layer deposition process, (d1) forming the conductive layer on the first barrier layer by sputtering process, and (e1) forming the second barrier layer on the conductive layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the multilayer thin film. Metal substrate (110) Graphene layer (120) First barrier layer (130) Conductive layer (140) Second barrier layer (150)