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  • 专利标题:   Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.
  • 专利号:   WO2014073232-A1, JP2014096411-A, TW201419481-A, US2015235960-A1, JP6083197-B2, US9576907-B2, TW567915-B1
  • 发明人:   SATO S, KONDO D, SATO M, NIHEI M, KONDO T
  • 专利权人:   NAT INST ADVANCED IND SCI TECHNOLOGY, DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO, FUJITSU LTD, FUJITSU LTD, FUJITSU LTD
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B031/02, H01L021/3205, H01L021/768, H01L023/532, H01L023/52, H01L023/522, C01B032/15, C01B032/152, C01B032/158, C01B032/18, C01B032/182, H01L021/20, H01L027/10, H01L029/06, H01L047/00
  • 专利详细信息:   WO2014073232-A1 15 May 2014 H01L-021/3205 201443 Pages: 35 Japanese
  • 申请详细信息:   WO2014073232-A1 WOJP065352 03 Jun 2013
  • 优先权号:   JP245594

▎ 摘　　要

NOVELTY - A wiring structure comprises carbon nanotubes (7a) and graphene (4a). The carbon nanotubes and graphene are connected electrically through a metal block (10). USE - Wiring structure is used for semiconductor device e.g. large scale integration. ADVANTAGE - The wiring structure exhibits excellent connection-reliability, and is simple. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of wiring structure, which involves electrically-connecting carbon nanotubes and graphene. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic sectional view of the wiring structure. Substrate (1) Insulation film (3) Graphene (4a) Open hole (5a) Opening (5b) Carbon nanotubes (7a) Metal block (10)