▎ 摘　　要

NOVELTY - Preparing high-quality graphene involves processing graphene growing substrate by reducing defects on the surface of the substrate; placing precursor on substrate by transferring the graphene sheet formed by opening nano carbon tube on the substrate; precipitating and growing graphene with carbon tube by putting the substrate with precursor in chemical vapor deposition furnace, keeping the growth temperature of 1000 degrees C; growing for 10 minutes to obtain large-area graphene layer; controlling at little air flow and short time; and growing the precursor into the graphene strip. USE - For preparing high-quality graphene. ADVANTAGE - The method provides large-scale and low-defect graphene material with high quality; and is convenient to apply functional device. DETAILED DESCRIPTION - Preparing high-quality graphene involves processing graphene growing substrate by reducing defects on the surface of the substrate by using chemical physical grinding, electric chemical polishing and annealing; placing precursor on substrate by transferring the graphene sheet formed by opening nano carbon tube on the substrate, if the carbon nano tube is in situ growth or opening, then removing impurities and directly entering the next step of graphene growth; precipitating and growing graphene with carbon tube by putting the substrate with precursor in chemical vapor deposition furnace, keeping the growth temperature of 1000 degrees C, filling methane and hydrogen, where the methane flow is 25 sccm, and the hydrogen flow is 10 sccm; growing for 10 minutes to obtain large-area graphene layer; controlling at little air flow and short time; and growing the precursor into the graphene strip.