▎ 摘　　要

NOVELTY - A thin-film transistor (TFT) substrate comprises an insulating substrate (10); a passivation film (70) formed on the insulating substrate and having a contact hole (76) which exposes a portion of a drain electrode (66); and a pixel electrode (82) connected to the drain electrode by the contact hole and formed of a carbon composition comprising at least one of carbon nanotubes and graphene on the passivation film, where the contact hole is completely filled with the carbon composition or the passivation film has a thickness of less than or equal to 1000 Angstrom . USE - As thin-film transistor (TFT) substrate (claimed) in liquid crystal displays (LCDs) widely used in types of flat panel displays (FPDs). ADVANTAGE - The substrate is low cost, has stable conductivity, and high transmittance; ensures film uniformity and has small contact resistance. The carbon nanotubes and graphene are less expensive than indium tin oxide (ITO) or indium zinc oxide (IZO) but exhibits superior conductivity and transmittance. The carbon composition exhibits advantages in terms of cost, conductivity, transmittance and process simplification. DETAILED DESCRIPTION - A thin-film transistor (TFT) substrate comprises an insulating substrate (10); a passivation film (70) formed on the insulating substrate and having a contact hole (76) which exposes a portion of a drain electrode (66); and a pixel electrode (82) connected to the drain electrode by the contact hole and formed of a carbon composition comprising at least one of carbon nanotubes and graphene on the passivation film, where the contact hole is completely filled with the carbon composition or the passivation film has a thickness of less than or equal to 1000 Angstrom . The contact hole has a tapered sidewall profile in which a width of the contact hole is reduced toward the drain electrode. The pixel electrode is formed by coating the carbon composition on the passivation film using a coating process. An INDEPENDENT CLAIM is included for a method of manufacturing TFT substrate, involving: forming a passivation film by forming an insulating film on a substrate; forming a contact hole which exposes a portion of a drain electrode by patterning the passivation film; and forming a pixel electrode of a carbon composition comprising at least one of carbon nanotubes and graphene on the passivation film while completely filling the contact hole with the carbon composition; or forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern by leaving the substrate at a predetermined temperature in the presence of a gas after the performing of the first dry-etching; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask after the performing of the baking; removing the photoresist pattern after the performing of the second dry-etching; and forming a pixel electrode of a carbon composition comprising at least one of carbon nanotubes and graphene on a top surface of the passivation film. The baking is performed at a temperature of 25 to 100 degrees C and in the presence of an oxygen gas. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of thin film transistor. Insulating substrate (10) Gate electrode (26) Gate insulating film (30) Semiconductor layer (40) Ohmic contact layers (55, 56) Source electrode (65) Drain electrode (66) Passivation film (70) Contact hole (76) Pixel electrode (82)