▎ 摘　　要

NOVELTY - Preparing large-size two-dimensional material heterostructures comprises depositing atomic layer and growth on an aluminum oxide film, spin-coating photoresist, and drying, using electrochemical bubbling method for peeling the first two-dimensional material from first metal substrate, using second metal substrate on which second two-dimensional material as first two-dimensional material obtained by lifting and peeling the substrate to obtain first two-dimensional material/second two-dimensional material heterostructure, performing spin-coating photoresist on the photoresist surface of first two-dimensional material with aluminum oxide film and drying, using electrochemical bubbling method for peeling the first two-dimensional material/second two-dimensional material heterostructure from second metal substrate and cleaning, using the target substrate for lifting peeled heterostructure, drying, then removing the surface photoresist and aluminum oxide film, stripping, and drying. USE - The method is useful for preparing large-size two-dimensional material heterostructures. ADVANTAGE - The method: can greatly solve the pollution between material interfaces during the assembly process of two-dimensional material heterostructure; and can prepare large-scale clean interface two-dimensional material heterostructure with a continuous and complete structure. DETAILED DESCRIPTION - Preparing large-size two-dimensional material heterostructures comprises (a) depositing atomic layer and growth on an aluminum oxide film on the surface of first two-dimensional material on first metal substrate, spin-coating photoresist, and drying, (b) using electrochemical bubbling method for peeling the first two-dimensional material from first metal substrate, and cleaning, (c) using second metal substrate on which second two-dimensional material as first two-dimensional material obtained by lifting and peeling the substrate to obtain first two-dimensional material/second two-dimensional material heterostructure, and drying, (d) performing spin-coating photoresist on the photoresist surface of first two-dimensional material with aluminum oxide film and drying, (e) using electrochemical bubbling method for peeling the first two-dimensional material/second two-dimensional material heterostructure from second metal substrate and cleaning, and (f) using the target substrate for lifting the peeled heterostructure, drying, then removing the surface photoresist and aluminum oxide film, repeating the lifting and peeling operations until the number of 2D material layers reaches the preset number of 2D material heterostructures, stripping, drying, and then using the target substrate for lifting the stripped heterostructure, and drying for removing the surface photoresist and aluminum oxide film.