▎ 摘　　要

NOVELTY - The method comprises exposing a portion of a multi-layered graphene surface extending from a silicon carbide substrate to an acidic environment to separate graphene layers in the portion of the multi-layered graphene surface, exposing the portion of the multi-layered graphene surface to a functionalizing material that binds to carbon atoms in the graphene sheets so that the functionalizing material remains between the graphene sheets to generate a functionalized graphitic structure, and drying the functionalized graphitic structure in an inert environment. USE - The method is useful for making a functionalized graphitic structure, which is useful in microelectronic applications. ADVANTAGE - The method enables the large-scale production of the functionalized graphitic structure in an easy and efficient manner with improved electrical property and without any damage by reducing the charge density at an interface between a multi-layered graphene structure and a silicon carbide crystal. DETAILED DESCRIPTION - The method comprises exposing a portion of a multi-layered graphene surface extending from a silicon carbide substrate to an acidic environment to separate graphene layers in the portion of the multi-layered graphene surface, exposing the portion of the multi-layered graphene surface to a functionalizing material that binds to carbon atoms in the graphene sheets so that the functionalizing material remains between the graphene sheets to generate a functionalized graphitic structure, and drying the functionalized graphitic structure in an inert environment. The portion of the graphitic surface is exposed to the acidic environment by submerging the portion of the graphitic surface into a solution of sulfuric acid and sodium nitrate, and maintaining the solution at a temperature of less than 20 degrees C. The portion of the graphitic surface is exposed to the functionalizing material by submerging the portion of the graphitic surface into a solution including an oxidizing agent, maintaining the solution at a temperature of less than 20 degrees C, and agitating the solution. The method further comprises heating the solution to a temperature of less than 32 degrees C and then agitating the solution until visually perceived effervescence of the solution diminishes, adding water to the solution and allowing the solution to increase in temperature until the temperature of the solution is 95 degrees C, maintaining the solution at 95 degrees C for one minute, adding a solution of water and hydrogen peroxide to the solution for terminating the reaction, and rinsing the portion of the multi-layered graphene surface in water. The inert environment comprises a nitrogen flow. A first masking material is applied to a portion of the multi-layered graphene surface prior to exposing the portion of the multi-layered graphene surface to the acidic environment. The mask material is configured to inhibit contact between the portion of the multi-layered graphene surface and the acidic environment. A second masking material that resists the reducing environment is applied to a portion of the functionalized graphitic structure. A portion of the functionalized graphitic structure is subjected to a reducing environment by applying an energy source e.g. an electron beam to the portion of the functionalized graphitic structure. INDEPENDENT CLAIMS are included for: (1) a method for reducing charge density at an interface between a multi-layered graphene structure and a silicon carbide crystal; and (2) a graphitic circuit. DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional schematic view of a functionalized graphitic structure. Silicon carbide substrate (410) Source electrode (414) Dielectric layer (415) Drain electrode (416) Gate. (420)