• 专利标题:   Preparing epitaxial growth of metal organic framework surface by matching two-dimensional material templates with lattice symmetry involves using e.g. graphene single crystal, graphene thin film, graphene nanosheets, methane, and hydrogen.
  • 专利号:   CN110592658-A
  • 发明人:   SUN Z, HU A
  • 专利权人:   UNIV FUDAN
  • 国际专利分类:   C30B025/18, C30B029/02, C30B029/54, C30B029/64, C30B007/14
  • 专利详细信息:   CN110592658-A 20 Dec 2019 C30B-007/14 202007 Pages: 10 Chinese
  • 申请详细信息:   CN110592658-A CN10830875 04 Sep 2019
  • 优先权号:   CN10830875

▎ 摘  要

NOVELTY - Preparing an epitaxial growth of a metal-organic framework surface by matching two-dimensional material templates with lattice symmetry involves growing a graphene single crystal or a graphene thin film on both sides of a copper foil at high temperature by using an electrochemically polished copper foil as a growth substrate, chemical vapor deposition, and methane and hydrogen as gas sources or using liquid phase stripping method to strip graphite to obtain graphene nanosheets, taking the graphene single crystal, the graphene thin film or the graphene nanosheets as a template, then adding to a precursor solution by using Solvothermal method, and epitaxially growing the metal- organic framework on the surface of the template by a precursor in the precursor solution. USE - The method is useful for preparing an epitaxial growth of a metal organic framework surface by matching two-dimensional material templates with lattice symmetry. ADVANTAGE - The method can be controlled step by step, and has simple operation. The epitaxial growth template material can be changed according to the performance requirements, can be expanded on different types of metal-organic frameworks, and can accurately construct metal-organic framework composites that meet the needs.