▎ 摘　　要

NOVELTY - The structure has a waveguide modulation region comprising a waveguide (41), a cover layer (42), a top electrode and a bottom electrode (44). The waveguide is located in a middle position of an upper surface of a semiconductor thin layer (3) or tightly contact with the semiconductor thin layer. The cover layer is covered on the waveguide and the semiconductor thin layer. The top electrode is located right above the waveguide and tightly contact with the cover layer. The bottom electrode is located on a side of the waveguide. The waveguide comprises aluminum nitride and doped aluminum nitride. USE - Electro-optical modulation integrated waveguide structure. Uses include but are not limited to aluminum nitride electro-optical modulator, waveguide delay line, micro-ring modulator, nano-beam resonant cavity modulator and other devices. ADVANTAGE - The structure can effectively avoid excessive partial pressure action of silicon oxide medium and realize maximum utilization of an electric field. The structure is simple, and has strong characteristics, and can improve performance of an aluminum nitride electro-optical modulator and reduce operation cost. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an electro-optical modulation integrated waveguide structure. (Drawing includes non-English language text). 3Semiconductor thin layer 41Waveguide 42Cover layer 44Bottom electrode 431Top electrode metal plating layer